N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STMicroelectronics STU1HN60K3

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
791-7949
Mfr. Part No.:
STU1HN60K3
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

600 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Length

6.6mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

2.4mm

Minimum Operating Temperature

-55 °C

Height

6.2mm

Series

MDmesh K3, SuperMESH3

N-channel MDmesh™ K3 series, SuperMESH3™, STMicroelectronics



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