N-Channel MOSFET, 6 A, 800 V, 3-Pin TO-220 STMicroelectronics STP8N80K5
- RS Stock No.:
- 791-7835
- Mfr. Part No.:
- STP8N80K5
- Brand:
- STMicroelectronics
Stock information currently inaccessible
- RS Stock No.:
- 791-7835
- Mfr. Part No.:
- STP8N80K5
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 950 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 16.5 nC @ 10 V | |
| Width | 4.6mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Series | MDmesh K5, SuperMESH5 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.75mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 950 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 16.5 nC @ 10 V | ||
Width 4.6mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Series MDmesh K5, SuperMESH5 | ||
Minimum Operating Temperature -55 °C | ||
Height 15.75mm | ||
The STMicroelectronics N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Ultra low gate charge
100% avalanche tested