N-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-323 Vishay Si1308EDL-T1-GE3

RS Stock No.:: 787-9121P
Mfr. Part No.:: Si1308EDL-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-323 Vishay Si1308EDL-T1-GE3

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RS Stock No.:: 787-9121P
Mfr. Part No.:: Si1308EDL-T1-GE3
Brand:: Vishay

Si1308EDL, N-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

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Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.5 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-323
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	185 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	400 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Length	2.2mm
Transistor Material	Si
Typical Gate Charge @ Vgs	1.4 nC @ 4.5 V
Width	1.35mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1mm

N-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-323 Vishay Si1308EDL-T1-GE3

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N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

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