Vishay N-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-323 Si1308EDL-T1-GE3
- RS Stock No.:
- 787-9121P
- Mfr. Part No.:
- Si1308EDL-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£47.75
(exc. VAT)
£57.25
(inc. VAT)
FREE delivery for orders over £50.00
Being discontinued
- Final 12,125 unit(s), ready to ship
Units | Per unit |
|---|---|
| 250 - 600 | £0.191 |
| 625 - 1225 | £0.166 |
| 1250 - 2475 | £0.141 |
| 2500 + | £0.12 |
*price indicative
- RS Stock No.:
- 787-9121P
- Mfr. Part No.:
- Si1308EDL-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 185 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 400 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Width | 1.35mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 1.4 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 2.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 185 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 1.35mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 1.4 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 2.2mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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