Vishay P-Channel MOSFET, 4.4 A, 40 V, 3-Pin SOT-23 SI2319CDS-T1-GE3

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Subtotal 10 units (supplied on a continuous strip)*

£3.32

(exc. VAT)

£3.98

(inc. VAT)

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10 +£0.332

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Packaging Options:
RS Stock No.:
787-9042P
Mfr. Part No.:
SI2319CDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.4 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

108 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Typical Gate Charge @ Vgs

13.6 nC @ 10 V

Length

3.04mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.02mm

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
• Load Switch
• DC/DC Converter


MOSFET Transistors, Vishay Semiconductor