Infineon HEXFET P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF
- RS Stock No.:
- 784-0325P
- Mfr. Part No.:
- IRLML5203TRPBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 100 - 240 | £0.225 |
| 250 - 490 | £0.142 |
| 500 - 990 | £0.13 |
| 1000 + | £0.107 |
*price indicative
- RS Stock No.:
- 784-0325P
- Mfr. Part No.:
- IRLML5203TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 165 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 9.5 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 165 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 9.5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML5203TRPBF
This MOSFET is a high-performance power device suitable for a range of applications in the electronics sector. Featuring a compact SOT-23 package, this P-channel device provides significant efficiency with a maximum continuous drain current of 3A and a drain-source voltage of 30V. With dimensions of 3.04mm in length, 1.4mm in width, and 1.02mm in height, it is well-suited for space-constrained designs.
Features & Benefits
• Capable of 30V drain-source voltage for versatile use
• Designed for surface mount for simplified PCB design
• Operates within a temperature range of -55°C to +150°C
• Utilises enhancement mode for reliable switching performance
• Designed for surface mount for simplified PCB design
• Operates within a temperature range of -55°C to +150°C
• Utilises enhancement mode for reliable switching performance
Applications
• Utilised in battery management systems for optimal performance
• Used in portable electronics due to low-profile design
• Applied in load management solutions across various devices
• Suitable for advanced automation control systems
• Used in portable electronics due to low-profile design
• Applied in load management solutions across various devices
• Suitable for advanced automation control systems
What is the significance of the low Rds(on) in this device?
The low Rds(on) ensures reduced power loss during operation, which enhances overall efficiency and maintains lower thermal levels in applications.
How does the power dissipation capability impact device performance?
The capability to dissipate up to 1.25W allows for effective heat management, ensuring the device operates reliably even under maximum load conditions without thermal failure.
What factors influence the selection of this MOSFET for a specific application?
Factors such as maximum continuous drain current, voltage ratings, and thermal characteristics should be considered to ensure compatibility with circuit requirements and performance expectations.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
