N-Channel MOSFET, 3.3 A, 650 V, 3-Pin DPAK STMicroelectronics STD3NM60N

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
783-2905
Mfr. Part No.:
STD3NM60N
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

6.6mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

2.4mm

Series

MDmesh

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN