Dual P-Channel MOSFET, 4.1 A, 20 V, 6-Pin WDFN onsemi NTLJD3115PG

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	P
	Maximum Continuous Drain Current	4.1 A
	Maximum Drain Source Voltage	20 V
	Package Type	WDFN
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	200 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.3 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-8 V, +8 V
	Width	2mm
	Length	2mm
	Number of Elements per Chip	2
	Typical Gate Charge @ Vgs	5.5 nC @ 4.5 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Height	0.75mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand ON Semiconductor
	Channel Type P
	Maximum Continuous Drain Current 4.1 A
	Maximum Drain Source Voltage 20 V
	Package Type WDFN
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 200 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.3 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -8 V, +8 V
	Width 2mm
	Length 2mm
	Number of Elements per Chip 2
	Typical Gate Charge @ Vgs 5.5 nC @ 4.5 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Height 0.75mm
	Minimum Operating Temperature -55 °C

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