Dual N/P-Channel MOSFET, 1.1 A, 910 mA, 8 V, 20 V, 6-Pin SOT-363 ON Semiconductor NTJD4105CT1G

Brand

ON Semiconductor

Channel Type

N, P

Maximum Continuous Drain Current

1.1 A, 910 mA

Maximum Drain Source Voltage

8 V, 20 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

445 mΩ, 900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

550 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, -8 V, +12 V, +8 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

1.3 nC @ 4.5 V, 2.2 nC @ 4.5 V

Width

1.35mm

Height

1mm

Minimum Operating Temperature

-55 °C