N-Channel MOSFET, 108 A, 60 V, 8-Pin Power 56 onsemi FDMS86500DC

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Specifications

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Legislation and Compliance

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	108 A
	Maximum Drain Source Voltage	60 V
	Package Type	Power 56
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	3.7 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	125 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	5.1mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	76 nC @ 10 V
	Width	5.85mm
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Series	PowerTrench
	Height	1.05mm

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 108 A
	Maximum Drain Source Voltage 60 V
	Package Type Power 56
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 3.7 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 125 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 5.1mm
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 76 nC @ 10 V
	Width 5.85mm
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Series PowerTrench
	Height 1.05mm

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