N-Channel MOSFET, 10.2 A, 600 V, 3-Pin TO-220F onsemi FCPF380N60E
- RS Stock No.:
- 772-9115
- Mfr. Part No.:
- FCPF380N60E
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£4.94
(exc. VAT)
£5.92
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £2.47 | £4.94 |
| 10 - 98 | £2.08 | £4.16 |
| 100 - 248 | £1.635 | £3.27 |
| 250 - 498 | £1.585 | £3.17 |
| 500 + | £1.39 | £2.78 |
*price indicative
- RS Stock No.:
- 772-9115
- Mfr. Part No.:
- FCPF380N60E
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10.2 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 380 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 31 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.9mm | |
| Length | 10.36mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
| Series | SuperFET II | |
| Height | 9.19mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 10.2 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 380 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 31 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 4.9mm | ||
Length 10.36mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Series SuperFET II | ||
Height 9.19mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN