Dual P-Channel MOSFET, 600 mA, 20 V, 6-Pin SOT-363 (SC-70) onsemi FDG6306P

Subtotal (1 pack of 25 units)*

£1.85

(exc. VAT)

£2.225

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Pack*
25 +	£0.074	£1.85

*price indicative

Specifications

Technical Reference

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	P
	Maximum Continuous Drain Current	600 mA
	Maximum Drain Source Voltage	20 V
	Package Type	SOT-363 (SC-70)
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	700 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.6V
	Maximum Power Dissipation	300 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-12 V, +12 V
	Typical Gate Charge @ Vgs	1.4 nC @ 4.5 V
	Number of Elements per Chip	2
	Maximum Operating Temperature	+150 °C
	Width	1.25mm
	Length	2mm
	Transistor Material	Si
	Series	PowerTrench
	Minimum Operating Temperature	-55 °C
	Height	1mm

	Select all
	Brand ON Semiconductor
	Channel Type P
	Maximum Continuous Drain Current 600 mA
	Maximum Drain Source Voltage 20 V
	Package Type SOT-363 (SC-70)
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 700 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.6V
	Maximum Power Dissipation 300 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -12 V, +12 V
	Typical Gate Charge @ Vgs 1.4 nC @ 4.5 V
	Number of Elements per Chip 2
	Maximum Operating Temperature +150 °C
	Width 1.25mm
	Length 2mm
	Transistor Material Si
	Series PowerTrench
	Minimum Operating Temperature -55 °C
	Height 1mm

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