Dual P-Channel MOSFET, 1.8 A, 30 V, 6-Pin SOT-23 onsemi FDC6506P
- RS Stock No.:
- 761-4417
- Mfr. Part No.:
- FDC6506P
- Brand:
- ON Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 761-4417
- Mfr. Part No.:
- FDC6506P
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.8 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 280 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 960 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Width | 1.7mm | |
| Typical Gate Charge @ Vgs | 2.3 nC @ 10 V | |
| Series | PowerTrench | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Width 1.7mm | ||
Typical Gate Charge @ Vgs 2.3 nC @ 10 V | ||
Series PowerTrench | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||