STMicroelectronics MDmesh N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220FP STF14NM50N
- RS Stock No.:
- 761-2754P
- Mfr. Part No.:
- STF14NM50N
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 5 units (supplied in a tube)*
£9.25
(exc. VAT)
£11.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 28 unit(s) ready to ship
- Plus 50 unit(s) shipping from 25 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 - 9 | £1.85 |
| 10 - 24 | £1.66 |
| 25 - 49 | £1.50 |
| 50 + | £1.42 |
*price indicative
- RS Stock No.:
- 761-2754P
- Mfr. Part No.:
- STF14NM50N
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-220FP | |
| Series | MDmesh | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 320 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.6mm | |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 16.4mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-220FP | ||
Series MDmesh | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 320 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 16.4mm | ||
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics