STMicroelectronics MDmesh M5 N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5
- RS Stock No.:
- 761-0635
- Mfr. Part No.:
- STW77N65M5
- Brand:
- STMicroelectronics
Currently unavailable
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- RS Stock No.:
- 761-0635
- Mfr. Part No.:
- STW77N65M5
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 69 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | MDmesh M5 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 38 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 400 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 15.75mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V | |
| Width | 5.15mm | |
| Transistor Material | Si | |
| Height | 20.15mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 69 A | ||
Maximum Drain Source Voltage 650 V | ||
Series MDmesh M5 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 38 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 400 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +25 V | ||
Maximum Operating Temperature +150 °C | ||
Length 15.75mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 185 nC @ 10 V | ||
Width 5.15mm | ||
Transistor Material Si | ||
Height 20.15mm | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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