STMicroelectronics FDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 STW20NM60FD
- RS Stock No.:
- 761-0629P
- Mfr. Part No.:
- STW20NM60FD
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 2 units (supplied in a tube)*
£11.22
(exc. VAT)
£13.46
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 543 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 2 + | £5.61 |
*price indicative
- RS Stock No.:
- 761-0629P
- Mfr. Part No.:
- STW20NM60FD
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | FDmesh | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 290 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 214 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.15mm | |
| Length | 15.75mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 20.15mm | |
| Minimum Operating Temperature | -65 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Series FDmesh | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 290 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 214 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 5.15mm | ||
Length 15.75mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 20.15mm | ||
Minimum Operating Temperature -65 °C | ||
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics