N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH180N10F3-2

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
761-0500
Mfr. Part No.:
STH180N10F3-2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

315 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

10.4mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

114.6 nC @ 10 V

Transistor Material

Si

Length

15.8mm

Minimum Operating Temperature

-55 °C

Height

4.8mm

Series

STripFET F3

N-Channel STripFET™ F3, STMicroelectronics


STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


MOSFET Transistors, STMicroelectronics