STMicroelectronics MDmesh N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin TO-3PF STFW3N150
- RS Stock No.:
- 761-0493
- Mfr. Part No.:
- STFW3N150
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£3.01
(exc. VAT)
£3.61
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 100 unit(s) shipping from 11 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £3.01 |
| 5 - 9 | £2.86 |
| 10 - 24 | £2.56 |
| 25 - 49 | £2.31 |
| 50 + | £2.21 |
*price indicative
- RS Stock No.:
- 761-0493
- Mfr. Part No.:
- STFW3N150
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.5 A | |
| Maximum Drain Source Voltage | 1500 V | |
| Series | MDmesh | |
| Package Type | TO-3PF | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 63 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 29.3 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 5.7mm | |
| Length | 15.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 26.7mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 1500 V | ||
Series MDmesh | ||
Package Type TO-3PF | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 63 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 29.3 nC @ 10 V | ||
Transistor Material Si | ||
Width 5.7mm | ||
Length 15.7mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 26.7mm | ||
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