STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 9.2 A, 900 V, 3-Pin TO-247 STW11NK90Z
- RS Stock No.:
- 761-0266
- Mfr. Part No.:
- STW11NK90Z
- Brand:
- STMicroelectronics
Subtotal (1 unit)*
£5.53
(exc. VAT)
£6.64
(inc. VAT)
FREE delivery for orders over £50.00
- 17 unit(s) ready to ship
- Plus 1 unit(s) ready to ship from another location
- Plus 102 unit(s) shipping from 09 September 2025
Units | Per unit |
---|---|
1 - 1 | £5.53 |
2 + | £5.25 |
*price indicative
- RS Stock No.:
- 761-0266
- Mfr. Part No.:
- STW11NK90Z
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 9.2 A | |
Maximum Drain Source Voltage | 900 V | |
Series | MDmesh, SuperMESH | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 980 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 200 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Length | 15.75mm | |
Width | 5.15mm | |
Typical Gate Charge @ Vgs | 95 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Height | 20.15mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.2 A | ||
Maximum Drain Source Voltage 900 V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 980 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 15.75mm | ||
Width 5.15mm | ||
Typical Gate Charge @ Vgs 95 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
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