STMicroelectronics MDmesh N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 STP14NM50N
- RS Stock No.:
- 761-0011
- Mfr. Part No.:
- STP14NM50N
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£3.18
(exc. VAT)
£3.82
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 142 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £3.18 |
| 10 - 99 | £2.68 |
| 100 - 499 | £2.17 |
| 500 - 999 | £1.93 |
| 1000 + | £1.63 |
*price indicative
- RS Stock No.:
- 761-0011
- Mfr. Part No.:
- STP14NM50N
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-220 | |
| Series | MDmesh | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 320 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 90 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Width | 4.6mm | |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 10.4mm | |
| Height | 15.75mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-220 | ||
Series MDmesh | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 320 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 10.4mm | ||
Height 15.75mm | ||
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