STMicroelectronics STripFET N-Channel MOSFET, 50 A, 100 V, 3-Pin DPAK STD40NF10
- RS Stock No.:
- 760-9904
- Mfr. Part No.:
- STD40NF10
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
£7.11
(exc. VAT)
£8.53
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 30 unit(s) ready to ship
- Plus 1,480 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £1.422 | £7.11 |
| 10 - 95 | £1.202 | £6.01 |
| 100 - 495 | £0.91 | £4.55 |
| 500 - 995 | £0.77 | £3.85 |
| 1000 + | £0.616 | £3.08 |
*price indicative
- RS Stock No.:
- 760-9904
- Mfr. Part No.:
- STD40NF10
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | STripFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 28 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.2mm | |
| Typical Gate Charge @ Vgs | 46.5 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.4mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 100 V | ||
Series STripFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 28 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Width 6.2mm | ||
Typical Gate Charge @ Vgs 46.5 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.4mm | ||
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