STMicroelectronics STripFET N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STB160N75F3
- RS Stock No.:
- 760-9828P
- Mfr. Part No.:
- STB160N75F3
- Brand:
- STMicroelectronics
Subtotal 1 unit (supplied on a continuous strip)*
£3.10
(exc. VAT)
£3.72
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,852 unit(s) ready to ship
- Plus 999,996,147 unit(s) shipping from 23 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £3.10 |
*price indicative
- RS Stock No.:
- 760-9828P
- Mfr. Part No.:
- STB160N75F3
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | D2PAK (TO-263) | |
| Series | STripFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 330 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.75mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 10.4mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.6mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type D2PAK (TO-263) | ||
Series STripFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.75mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 10.4mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 85 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.6mm | ||
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics