N-Channel MOSFET, 14 A, 600 V, 3-Pin D2PAK STMicroelectronics STB15NM60ND
- RS Stock No.:
- 760-9819
- Mfr. Part No.:
- STB15NM60ND
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£4.31
(exc. VAT)
£5.17
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | £4.31 |
| 10 - 19 | £3.46 |
| 20 - 49 | £3.32 |
| 50 - 249 | £3.18 |
| 250 + | £3.06 |
*price indicative
- RS Stock No.:
- 760-9819
- Mfr. Part No.:
- STB15NM60ND
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 299 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.75mm | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Width | 10.4mm | |
| Transistor Material | Si | |
| Height | 4.6mm | |
| Series | FDmesh | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 299 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.75mm | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Width 10.4mm | ||
Transistor Material Si | ||
Height 4.6mm | ||
Series FDmesh | ||