onsemi PowerTrench N-Channel MOSFET, 1.6 A, 150 V, 3-Pin SOT-23 FDN86246
- RS Stock No.:
- 759-9655
- Mfr. Part No.:
- FDN86246
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£4.16
(exc. VAT)
£4.99
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 140 unit(s) ready to ship
- Plus 5 unit(s) ready to ship from another location
- Plus 3,000 unit(s) shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.832 | £4.16 |
| 50 - 95 | £0.718 | £3.59 |
| 100 - 495 | £0.622 | £3.11 |
| 500 - 995 | £0.546 | £2.73 |
| 1000 + | £0.498 | £2.49 |
*price indicative
- RS Stock No.:
- 759-9655
- Mfr. Part No.:
- FDN86246
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.6 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 481 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 1.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 2.92mm | |
| Typical Gate Charge @ Vgs | 2.9 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 1.4mm | |
| Height | 0.94mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.6 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 481 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 1.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 2.92mm | ||
Typical Gate Charge @ Vgs 2.9 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 1.4mm | ||
Height 0.94mm | ||
Minimum Operating Temperature -55 °C | ||
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