onsemi PowerTrench N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK FDB088N08
- RS Stock No.:
- 759-9465
- Mfr. Part No.:
- FDB088N08
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£5.21
(exc. VAT)
£6.252
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,600 unit(s) shipping from 21 October 2025
- Plus 800 unit(s) shipping from 05 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.605 | £5.21 |
| 20 - 198 | £2.245 | £4.49 |
| 200 + | £1.945 | £3.89 |
*price indicative
- RS Stock No.:
- 759-9465
- Mfr. Part No.:
- FDB088N08
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 75 V | |
| Series | PowerTrench | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.8 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 91 nC @ 10 V | |
| Width | 11.33mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 75 V | ||
Series PowerTrench | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.8 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 91 nC @ 10 V | ||
Width 11.33mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
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