onsemi PowerTrench N-Channel MOSFET, 79 A, 150 V, 3-Pin D2PAK FDB2532
- RS Stock No.:
- 759-8951P
- Mfr. Part No.:
- FDB2532
- Brand:
- onsemi
Bulk discount available
Subtotal 8 units (supplied on a continuous strip)*
£21.20
(exc. VAT)
£25.44
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 660 unit(s) shipping from 27 October 2025
- Plus 999,999,339 unit(s) shipping from 02 March 2026
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Units | Per unit |
|---|---|
| 8 - 39 | £2.65 |
| 40 - 199 | £2.37 |
| 200 - 399 | £2.05 |
| 400 + | £1.97 |
*price indicative
- RS Stock No.:
- 759-8951P
- Mfr. Part No.:
- FDB2532
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 79 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | PowerTrench | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 48 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 310 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 82 nC @ 10 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Width | 11.33mm | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 79 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 48 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 82 nC @ 10 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 11.33mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
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