Infineon OptiMOS™ 3 N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1
- RS Stock No.:
- 754-5389
- Mfr. Part No.:
- BSZ520N15NS3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£2.50
(exc. VAT)
£3.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 17,834 unit(s) shipping from 27 October 2025
- Plus 999,982,164 unit(s) shipping from 09 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.25 | £2.50 |
| 20 - 48 | £1.155 | £2.31 |
| 50 - 98 | £1.075 | £2.15 |
| 100 - 198 | £0.995 | £1.99 |
| 200 + | £0.91 | £1.82 |
*price indicative
- RS Stock No.:
- 754-5389
- Mfr. Part No.:
- BSZ520N15NS3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TSDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 52 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 57 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 8.7 nC @ 10 V | |
| Length | 3.4mm | |
| Number of Elements per Chip | 1 | |
| Width | 3.4mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 150 V | ||
Series OptiMOS™ 3 | ||
Package Type TSDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 52 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 57 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 8.7 nC @ 10 V | ||
Length 3.4mm | ||
Number of Elements per Chip 1 | ||
Width 3.4mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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