Infineon CoolMOS™ C3 N-Channel MOSFET, 32 A, 560 V, 3-Pin TO-247 SPW32N50C3FKSA1
- RS Stock No.:
- 753-3226
- Mfr. Part No.:
- SPW32N50C3FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£6.86
(exc. VAT)
£8.23
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 7 unit(s) ready to ship
- Plus 17 unit(s) ready to ship from another location
- Plus 113 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £6.86 |
| 10 - 24 | £6.52 |
| 25 - 49 | £6.38 |
| 50 - 99 | £5.97 |
| 100 + | £5.56 |
*price indicative
- RS Stock No.:
- 753-3226
- Mfr. Part No.:
- SPW32N50C3FKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 32 A | |
| Maximum Drain Source Voltage | 560 V | |
| Series | CoolMOS™ C3 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 284 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 16.13mm | |
| Typical Gate Charge @ Vgs | 170 nC @ 10 V | |
| Width | 5.21mm | |
| Height | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 32 A | ||
Maximum Drain Source Voltage 560 V | ||
Series CoolMOS™ C3 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 284 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 16.13mm | ||
Typical Gate Charge @ Vgs 170 nC @ 10 V | ||
Width 5.21mm | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- Infineon CoolMOS™ C3 N-Channel MOSFET 560 V, 3-Pin TO-247 SPW32N50C3FKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 560 V, 3-Pin TO-247 SPW16N50C3FKSA1
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin TO-247 STW40N65M2
- onsemi N-Channel MOSFET 30 V, 3-Pin SOT-23 NTR4003NT1G
- onsemi N-Channel MOSFET 30 V, 3-Pin SOT-23 NTR4003NT3G
- Infineon IPP019N08NF2S N-Channel MOSFET 80 V, 3-Pin TO-220 IPP019N08NF2SAKMA1
- STMicroelectronics N-Channel MOSFET 650 V, 3-Pin ACEPACK SMIT SH32N65DM6AG
- Nexperia N-Channel MOSFET 60 V, 4-Pin LFPAK33 BUK9M24-60EX