Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 BSS127H6327XTSA2
- RS Stock No.:
- 753-2832P
- Mfr. Part No.:
- BSS127H6327XTSA2
- Brand:
- Infineon
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£45.00
(exc. VAT)
£55.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 250 - 600 | £0.18 |
| 625 - 1225 | £0.167 |
| 1250 - 2475 | £0.157 |
| 2500 + | £0.118 |
*price indicative
- RS Stock No.:
- 753-2832P
- Mfr. Part No.:
- BSS127H6327XTSA2
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 mA | |
| Maximum Drain Source Voltage | 600 V | |
| Series | SIPMOS® | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.6V | |
| Minimum Gate Threshold Voltage | 1.4V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.3mm | |
| Typical Gate Charge @ Vgs | 0.65 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 2.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 mA | ||
Maximum Drain Source Voltage 600 V | ||
Series SIPMOS® | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.6V | ||
Minimum Gate Threshold Voltage 1.4V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.3mm | ||
Typical Gate Charge @ Vgs 0.65 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 2.9mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
