onsemi UniFET N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220 FDP8N50NZ

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	8 A
	Maximum Drain Source Voltage	500 V
	Package Type	TO-220
	Series	UniFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	850 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	139 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Typical Gate Charge @ Vgs	14 nC @ 10 V
	Width	4.83mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Length	10.67mm
	Minimum Operating Temperature	-55 °C
	Height	9.4mm

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 8 A
	Maximum Drain Source Voltage 500 V
	Package Type TO-220
	Series UniFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 850 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 139 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Typical Gate Charge @ Vgs 14 nC @ 10 V
	Width 4.83mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Length 10.67mm
	Minimum Operating Temperature -55 °C
	Height 9.4mm

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