onsemi Dual N/P-Channel MOSFET, 220 mA, 410 mA, 25 V, 6-Pin SOT-363 FDG6322C
- RS Stock No.:
- 739-0183
- Mfr. Part No.:
- FDG6322C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£1.56
(exc. VAT)
£1.87
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.312 | £1.56 |
| 50 - 95 | £0.268 | £1.34 |
| 100 - 495 | £0.234 | £1.17 |
| 500 - 995 | £0.204 | £1.02 |
| 1000 + | £0.186 | £0.93 |
*price indicative
- RS Stock No.:
- 739-0183
- Mfr. Part No.:
- FDG6322C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 220 mA, 410 mA | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 1.9 Ω, 7 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.65V | |
| Maximum Power Dissipation | 300 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Typical Gate Charge @ Vgs | 0.29 nC @ 4.5 V, 1.1 nC @ 5 V | |
| Number of Elements per Chip | 2 | |
| Length | 2mm | |
| Transistor Material | Si | |
| Width | 1.25mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 220 mA, 410 mA | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 1.9 Ω, 7 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 300 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 0.29 nC @ 4.5 V, 1.1 nC @ 5 V | ||
Number of Elements per Chip 2 | ||
Length 2mm | ||
Transistor Material Si | ||
Width 1.25mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||