Dual N/P-Channel-Channel MOSFET, 220 mA, 410 mA, 25 V, 6-Pin SOT-363 onsemi FDG6322C

RS Stock No.:: 739-0183
Mfr. Part No.:: FDG6322C
Brand:: onsemi

Dual N/P-Channel-Channel MOSFET, 220 mA, 410 mA, 25 V, 6-Pin SOT-363 onsemi FDG6322C

Available to back order for despatch 19/11/2024

Price Each (In a Pack of 5)

£0.32

(exc. VAT)

£0.38

(inc. VAT)

Units	Per unit	Per Pack*
5 +	£0.32	£1.60

*price indicative

RS Stock No.:: 739-0183
Mfr. Part No.:: FDG6322C
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	220 mA, 410 mA
Maximum Drain Source Voltage	25 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	1.9 Ω, 7 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.65V
Maximum Power Dissipation	300 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Transistor Material	Si
Typical Gate Charge @ Vgs	0.29 nC @ 4.5 V, 1.1 nC @ 5 V
Maximum Operating Temperature	+150 °C
Width	1.25mm
Number of Elements per Chip	2
Length	2mm
Height	1mm
Minimum Operating Temperature	-55 °C