N-Channel MOSFET, 130 A, 100 V, 3-Pin D2PAK Infineon AUIRFS4310
- RS Stock No.:
- 737-7486
- Mfr. Part No.:
- AUIRFS4310
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 737-7486
- Mfr. Part No.:
- AUIRFS4310
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 130 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 170 nC @ 10 V | |
| Width | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
| Height | 4.83mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 130 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 170 nC @ 10 V | ||
Width 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
Height 4.83mm | ||
The Infineon AUIRFS4310 single N-channel MOSFET specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. This MOSFET have a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Fast switching
Repetitive avalanche allowed up to tjmax
Lead free, RoHS compliant
Automotive qualified
Repetitive avalanche allowed up to tjmax
Lead free, RoHS compliant
Automotive qualified
