Name: N-Channel MOSFET, 180 A, 75 V, 7-Pin D2PAK Infineon AUIRF2907ZS-7P
Brand: Infineon
SKU: 737-7427
Price: 4.94 GBP
Availability: Discontinued

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	180 A
	Maximum Drain Source Voltage	75 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	3.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	300 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Length	10.35mm
	Number of Elements per Chip	1
	Width	10.05mm
	Typical Gate Charge @ Vgs	170 nC @ 10 V
	Transistor Material	Si
	Height	4.55mm
	Minimum Operating Temperature	-55 °C
	Series	HEXFET

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 180 A
	Maximum Drain Source Voltage 75 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 3.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 300 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Length 10.35mm
	Number of Elements per Chip 1
	Width 10.05mm
	Typical Gate Charge @ Vgs 170 nC @ 10 V
	Transistor Material Si
	Height 4.55mm
	Minimum Operating Temperature -55 °C
	Series HEXFET

N-Channel MOSFET, 180 A, 75 V, 7-Pin D2PAK Infineon AUIRF2907ZS-7P

Automotive N-Channel Power MOSFET, Infineon

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