Infineon HEXFET P-Channel MOSFET Transistor, 21 A, 30 V, 8-Pin PQFN IRFH9310TRPBF

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Packaging Options:
RS Stock No.:
737-7322
Mfr. Part No.:
IRFH9310TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Typical Gate Charge @ Vgs

58 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Length

6mm

Number of Elements per Chip

1

Height

0.95mm

Minimum Operating Temperature

-55 °C

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard surface-mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available