Infineon HEXFET N-Channel MOSFET, 2.7 A, 30 V, 3-Pin SOT-23 IRLML2030TRPBF
- RS Stock No.:
- 725-9353P
- Mfr. Part No.:
- IRLML2030TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£23.80
(exc. VAT)
£28.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,080 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 200 - 480 | £0.119 |
| 500 - 980 | £0.112 |
| 1000 - 1980 | £0.106 |
| 2000 + | £0.096 |
*price indicative
- RS Stock No.:
- 725-9353P
- Mfr. Part No.:
- IRLML2030TRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.7 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 1.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 1 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.04mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.7 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 1 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
