Infineon HEXFET N-Channel MOSFET, 5.3 A, 30 V, 3-Pin SOT-23 IRLML0030TRPBF
- RS Stock No.:
- 725-9344P
- Mfr. Part No.:
- IRLML0030TRPBF
- Brand:
- Infineon
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In Stock
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Units | Per unit |
|---|---|
| 200 - 480 | £0.086 |
| 500 - 980 | £0.08 |
| 1000 - 1980 | £0.075 |
| 2000 + | £0.069 |
*price indicative
- RS Stock No.:
- 725-9344P
- Mfr. Part No.:
- IRLML0030TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.3 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 27 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 1.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 2.6 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.3 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 27 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 2.6 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.4mm | ||
Length 3.04mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 5.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0030TRPBF
This MOSFET is designed to deliver efficient switching for electronic circuits across various industrial applications. Its enhancement mode FET configuration ensures optimal performance for load or system switching tasks. As a key component in the automation and electronics sectors, it offers versatility and high dependability, making it a fundamental selection for engineers.
Features & Benefits
• 5.3A continuous drain current extends operational capability
• 30V maximum drain-source voltage supports rigorous applications
• Low Rds(on) of 27 mΩ minimises energy losses during operation
• Compatible with surface mount technology for straightforward integration
• High-temperature rating of +150 °C maintains performance in challenging environments
• RoHS compliant, promoting eco-friendly design and manufacturing
• 30V maximum drain-source voltage supports rigorous applications
• Low Rds(on) of 27 mΩ minimises energy losses during operation
• Compatible with surface mount technology for straightforward integration
• High-temperature rating of +150 °C maintains performance in challenging environments
• RoHS compliant, promoting eco-friendly design and manufacturing
Applications
• Utilised in microcontroller interfacing for load management
• Suitable for automotive electronics for switch control
• Employed in power supply circuits for efficient current handling
• Ideal for consumer electronics requiring compact power solutions
• Applied in automation systems for consistent control operations
• Suitable for automotive electronics for switch control
• Employed in power supply circuits for efficient current handling
• Ideal for consumer electronics requiring compact power solutions
• Applied in automation systems for consistent control operations
How does the gate threshold voltage affect switching behaviour?
The gate threshold voltage specifies the minimum gate-to-source voltage required to activate the device, influencing its switching speed and operational efficiency.
What considerations should be taken during installation regarding thermal management?
Proper heat dissipation must be ensured as the maximum operating temperature is +150 °C, crucial for sustaining performance and safety.
Can it be integrated with existing circuits designed for other technologies?
Yes, it features an industry-standard pinout, ensuring compatibility with various existing surface mount techniques.
What are the implications of the maximum gate-source voltage rating?
The voltage rating of ±20 V must be observed to avoid gate damage and ensure stable operation within specified limits.
How does this component compare to other switching devices?
It features low Rds(on) characteristics that reduce switching losses, providing advantages over alternative types in terms of efficiency and thermal management.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
