P-Channel MOSFET, 15 A, 30 V, 8-Pin SOIC Infineon IRF9321PBF

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Each (In a Pack of 20)

£0.453

(exc. VAT)

£0.544

(inc. VAT)

RS Stock No.:
725-9246
Mfr. Part No.:
IRF9321PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

4.98mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V, 65 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Width

3.99mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.57mm

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.