STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 400 mA, 600 V, 3-Pin TO-92 STQ1HNK60R-AP
- RS Stock No.:
- 714-6796P
- Mfr. Part No.:
- STQ1HNK60R-AP
- Brand:
- STMicroelectronics
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Subtotal 20 units (supplied as a tape)*
£9.64
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£11.56
(inc. VAT)
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Units | Per unit |
|---|---|
| 20 + | £0.482 |
*price indicative
- RS Stock No.:
- 714-6796P
- Mfr. Part No.:
- STQ1HNK60R-AP
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 400 mA | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-92 | |
| Series | MDmesh, SuperMESH | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.25V | |
| Maximum Power Dissipation | 3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 4.95mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V | |
| Width | 3.94mm | |
| Height | 4.95mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 400 mA | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-92 | ||
Series MDmesh, SuperMESH | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.25V | ||
Maximum Power Dissipation 3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 4.95mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 7 nC @ 10 V | ||
Width 3.94mm | ||
Height 4.95mm | ||
Minimum Operating Temperature -55 °C | ||
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