STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 250 mA, 800 V, 3-Pin SOT-223 STN1NK80Z
- RS Stock No.:
- 714-1076P
- Mfr. Part No.:
- STN1NK80Z
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£10.40
(exc. VAT)
£12.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 490 | £0.104 |
| 500 - 990 | £0.088 |
| 1000 + | £0.071 |
*price indicative
- RS Stock No.:
- 714-1076P
- Mfr. Part No.:
- STN1NK80Z
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 250 mA | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | SOT-223 | |
| Series | MDmesh, SuperMESH | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 16 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 3.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 6.5mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 7.7 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.8mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 250 mA | ||
Maximum Drain Source Voltage 800 V | ||
Package Type SOT-223 | ||
Series MDmesh, SuperMESH | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 16 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 3.5mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 6.5mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 7.7 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.8mm | ||
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