Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-07L-E3
- RS Stock No.:
- 710-5060
- Mfr. Part No.:
- SUM110P06-07L-E3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£14.00
(exc. VAT)
£16.80
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 10 left, ready to ship
- Plus 695 left, shipping from 31 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.80 | £14.00 |
| 25 - 45 | £2.382 | £11.91 |
| 50 - 120 | £2.24 | £11.20 |
| 125 - 245 | £2.098 | £10.49 |
| 250 + | £1.96 | £9.80 |
*price indicative
- RS Stock No.:
- 710-5060
- Mfr. Part No.:
- SUM110P06-07L-E3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3.75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Typical Gate Charge @ Vgs | 230 nC @ 10 V | |
| Length | 10.41mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Typical Gate Charge @ Vgs 230 nC @ 10 V | ||
Length 10.41mm | ||
Maximum Operating Temperature +175 °C | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• TrenchFET® power MOSFET
• Package with low thermal resistance
MOSFET Transistors, Vishay Semiconductor
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