Vishay N-Channel MOSFET, 2.4 A, 500 V, 3-Pin DPAK IRFR420TRPBF
- RS Stock No.:
- 710-4657P
- Mfr. Part No.:
- IRFR420TRPBF
- Brand:
- Vishay
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£66.50
(exc. VAT)
£79.80
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 100 - 240 | £0.665 |
| 250 - 490 | £0.577 |
| 500 - 990 | £0.55 |
| 1000 + | £0.448 |
*price indicative
- RS Stock No.:
- 710-4657P
- Mfr. Part No.:
- IRFR420TRPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.4 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.4 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, 500V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Repetitive avalanche rated
Fast switching
Ease of paralleling
MOSFET Transistors, Vishay Semiconductor