P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3

RS Stock No.:: 710-3250P
Mfr. Part No.:: SI2309CDS-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3

15000 In stock - FREE next working day delivery available

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

£0.348

(exc. VAT)

£0.418

(inc. VAT)

Units	Per unit
10 +	£0.348

RS Stock No.:: 710-3250P
Mfr. Part No.:: SI2309CDS-T1-GE3
Brand:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1.2 A
Maximum Drain Source Voltage	60 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	345 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	3.04mm
Width	1.4mm
Transistor Material	Si
Typical Gate Charge @ Vgs	2.7 nC @ 4.5 V
Minimum Operating Temperature	-55 °C
Height	1.02mm

P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor