Vishay N-Channel MOSFET, 85 A, 100 V, 3-Pin TO-220AB SUP85N10-10-GE3
- RS Stock No.:
- 708-5178P
- Mfr. Part No.:
- SUP85N10-10-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£53.10
(exc. VAT)
£63.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 375 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 49 | £5.31 |
| 50 - 99 | £5.03 |
| 100 - 249 | £4.81 |
| 250 + | £4.55 |
*price indicative
- RS Stock No.:
- 708-5178P
- Mfr. Part No.:
- SUP85N10-10-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 85 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10.5 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 105 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.01mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 85 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 105 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.41mm | ||
Width 4.7mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.01mm | ||
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