Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF
- RS Stock No.:
- 708-5134
- Mfr. Part No.:
- IRF510PBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
£6.92
(exc. VAT)
£8.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 560 unit(s) ready to ship
- Plus 280 unit(s) ready to ship from another location
- Plus 5,030 unit(s) shipping from 11 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.692 | £6.92 |
| 100 - 240 | £0.52 | £5.20 |
| 250 - 490 | £0.428 | £4.28 |
| 500 - 990 | £0.381 | £3.81 |
| 1000 + | £0.356 | £3.56 |
*price indicative
- RS Stock No.:
- 708-5134
- Mfr. Part No.:
- IRF510PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.6 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 540 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 43 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.41mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.7mm | |
| Typical Gate Charge @ Vgs | 8.3 nC @ 10 V | |
| Height | 9.01mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.6 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 540 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 43 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.41mm | ||
Maximum Operating Temperature +175 °C | ||
Width 4.7mm | ||
Typical Gate Charge @ Vgs 8.3 nC @ 10 V | ||
Height 9.01mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
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