Dual N-Channel MOSFET, 100 A, 30 V, 6-Pin EMT ROHM EM6K1T2R
- RS Stock No.:
- 694-2828
- Mfr. Part No.:
- EM6K1T2R
- Brand:
- ROHM
Stock information currently inaccessible
- RS Stock No.:
- 694-2828
- Mfr. Part No.:
- EM6K1T2R
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | EMT | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 8 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 120 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Length | 1.6mm | |
| Width | 1.2mm | |
| Transistor Material | Si | |
| Height | 0.5mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type EMT | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 120 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Length 1.6mm | ||
Width 1.2mm | ||
Transistor Material Si | ||
Height 0.5mm | ||
- COO (Country of Origin):
- JP