onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT3G
- RS Stock No.:
- 690-0136
- Mfr. Part No.:
- BSS138LT3G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 25 units)*
£1.40
(exc. VAT)
£1.675
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- Plus 375 left, shipping from 08 September 2025
- Plus 54,925 left, shipping from 15 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.056 | £1.40 |
| 250 - 1225 | £0.029 | £0.725 |
| 1250 - 2475 | £0.028 | £0.70 |
| 2500 - 12475 | £0.028 | £0.70 |
| 12500 + | £0.027 | £0.675 |
*price indicative
- RS Stock No.:
- 690-0136
- Mfr. Part No.:
- BSS138LT3G
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 225 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.94mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 225 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 2.9mm | ||
Width 1.3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.94mm | ||
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