N-Channel MOSFET, 46 A, 250 V, 3-Pin TO-220AB Infineon IRFB4229PBF
- RS Stock No.:
- 688-6942
- Mfr. Part No.:
- IRFB4229PBF
- Brand:
- Infineon
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- RS Stock No.:
- 688-6942
- Mfr. Part No.:
- IRFB4229PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 46 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 46 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 330 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 10.66mm | |
| Width | 4.82mm | |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
| Minimum Operating Temperature | -40 °C | |
| Height | 9.02mm | |
| Series | HEXFET | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 46 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 46 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10.66mm | ||
Width 4.82mm | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V | ||
Minimum Operating Temperature -40 °C | ||
Height 9.02mm | ||
Series HEXFET | ||
The Infineon IRFB4229 is the 250V single N-channel strongIRFET power MOSFET in a TO-220 package. The StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Industry standard through-hole power package
High-current rating
Product qualification according to JEDEC standard
High-current rating
Product qualification according to JEDEC standard