STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z
- RS Stock No.:
- 687-5318P
- Mfr. Part No.:
- STW11NK100Z
- Brand:
- STMicroelectronics
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Subtotal 2 units (supplied in a tube)*
£11.06
(exc. VAT)
£13.28
(inc. VAT)
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In Stock
- 44 unit(s) ready to ship
- Plus 90 unit(s) shipping from 29 October 2025
- Plus 999,999,865 unit(s) shipping from 26 March 2026
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Units | Per unit |
|---|---|
| 2 + | £5.53 |
*price indicative
- RS Stock No.:
- 687-5318P
- Mfr. Part No.:
- STW11NK100Z
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.3 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.38 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 113 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 15.75mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.15mm | |
| Height | 20.15mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.3 A | ||
Maximum Drain Source Voltage 1000 V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.38 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 113 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 15.75mm | ||
Number of Elements per Chip 1 | ||
Width 5.15mm | ||
Height 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
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