STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 40 A, 600 V, 4-Pin ISOTOP STE40NC60
- RS Stock No.:
- 687-5226P
- Mfr. Part No.:
- STE40NC60
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£315.00
(exc. VAT)
£378.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 23 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 49 | £31.50 |
| 50 - 99 | £30.07 |
| 100 - 199 | £26.53 |
| 200 + | £24.75 |
*price indicative
- RS Stock No.:
- 687-5226P
- Mfr. Part No.:
- STE40NC60
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | MDmesh, SuperMESH | |
| Package Type | ISOTOP | |
| Mounting Type | Screw Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 130 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 460 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 25.5mm | |
| Transistor Material | Si | |
| Length | 38.2mm | |
| Typical Gate Charge @ Vgs | 307.5 nC @ 10 V | |
| Minimum Operating Temperature | -65 °C | |
| Height | 9.1mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 600 V | ||
Series MDmesh, SuperMESH | ||
Package Type ISOTOP | ||
Mounting Type Screw Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 130 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 460 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 25.5mm | ||
Transistor Material Si | ||
Length 38.2mm | ||
Typical Gate Charge @ Vgs 307.5 nC @ 10 V | ||
Minimum Operating Temperature -65 °C | ||
Height 9.1mm | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics