STMicroelectronics STripFET II N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK STB55NF06T4
- RS Stock No.:
- 687-5197P
- Mfr. Part No.:
- STB55NF06T4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£8.32
(exc. VAT)
£9.98
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,025 unit(s) shipping from 24 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £0.832 |
*price indicative
- RS Stock No.:
- 687-5197P
- Mfr. Part No.:
- STB55NF06T4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | STripFET II | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 18 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 9.35mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 44.5 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.6mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Series STripFET II | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 18 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.35mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 44.5 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.6mm | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics