N-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK STMicroelectronics STB100NF04T4
- RS Stock No.:
- 687-5093
- Mfr. Part No.:
- STB100NF04T4
- Brand:
- STMicroelectronics
Subtotal (1 pack of 2 units)**
£5.38
(exc. VAT)
£6.46
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Pack** |
|---|---|---|
| 2 + | £2.69 | £5.38 |
**price indicative
- RS Stock No.:
- 687-5093
- Mfr. Part No.:
- STB100NF04T4
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | STripFET II | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 9.35mm | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 110 nC @ 10 V | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.6mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Series STripFET II | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.35mm | ||
Length 10.4mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 110 nC @ 10 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 4.6mm | ||
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